دیتاشیت 2SB1122T-TD-E
مشخصات دیتاشیت
| نام دیتاشیت |
2SB1122T-TD-E
|
| حجم فایل |
52.476
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
4
|
مشخصات فنی
-
RoHS:
true
-
Category:
Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
-
Datasheet:
onsemi 2SB1122T-TD-E
-
Transistor Type:
PNP
-
Operating Temperature:
+150°C@(Tj)
-
Collector Current (Ic):
1A
-
Power Dissipation (Pd):
500mW
-
Transition Frequency (fT):
150MHz
-
DC Current Gain (hFE@Ic,Vce):
100@100mA,2V
-
Collector Cut-Off Current (Icbo):
100nA
-
Collector-Emitter Breakdown Voltage (Vceo):
50V
-
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib):
180mV@500mA,50mA
-
Package:
SOT-89
-
Manufacturer:
onsemi
-
Series:
-
-
Packaging:
Cut Tape (CT)
-
Part Status:
Active
-
Current - Collector (Ic) (Max):
1A
-
Voltage - Collector Emitter Breakdown (Max):
50V
-
Vce Saturation (Max) @ Ib, Ic:
500mV @ 50mA, 500mA
-
Current - Collector Cutoff (Max):
100nA (ICBO)
-
DC Current Gain (hFE) (Min) @ Ic, Vce:
100 @ 100mA, 2V
-
Power - Max:
500mW
-
Frequency - Transition:
150MHz
-
Mounting Type:
Surface Mount
-
Package / Case:
TO-243AA
-
Supplier Device Package:
PCP
-
Base Part Number:
2SB1122
-
detail:
Bipolar (BJT) Transistor PNP 50V 1A 150MHz 500mW Surface Mount PCP
